Title :
A new method for hermeticity measurements using porous ultra low k dielectrics for sub-ppm moisture detection
Author :
Grange, H. ; Danel, J.S. ; Feldis, H. ; Desloges, B. ; Jousseaume, V. ; Licitra, C. ; Manquat, P. Brunet ; Grosgeorges, P. ; Fassi, B. ; Sbiaa, Z. ; Robert, P.
Author_Institution :
CEA, LETI, Grenoble, France
Abstract :
A new way to detect a leakage in packaging for micro-mechanical sensors by using hydrophilic porous ultra low k dielectric components has been developed. Two synthesis means are used to deposit nanoporous SiOCH (PECVD) and MSQ (Spin Coating) with additional dedicated process to obtain high open porosity with an average pore radius distribution around 1 nm. The characterizations of the porous dielectric layers deposited on two electrodes with interdigitated fingers for capacitive measurements show a very high sensitivity to 51 % RH atmospheric air. Measurements show a 2% capacity variation for 1 ppm moisture. The process is CMOS compatible.
Keywords :
CMOS integrated circuits; capacitive sensors; integrated circuit packaging; low-k dielectric thin films; microsensors; moisture measurement; nanoporous materials; organic compounds; plasma CVD; porosity; spin coating; CMOS process; PECVD; capacitive measurements; hermeticity measurements; hydrophilic porous ultra low k dielectrics; leakage detection; micromechanical sensors; nanoporous dielectric material; packaging; polymethyselsisquioxane; pore radius distribution; porosity; spin coating; sub-ppm moisture detection; Atmospheric measurements; Coatings; Dielectric measurements; Electrodes; Fingers; Leak detection; Moisture measurement; Nanoporous materials; Packaging; Sensor phenomena and characterization; Leakage detection; hermeticity; nanometer porous dielectric;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285536
