DocumentCode
1854713
Title
Temperature dependence of PHEMT-based LNA´s trade-off performance from scattering parameters and noise figure measurements
Author
Caddemi, A. ; Livreri, P. ; Sannino, M.
Author_Institution
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
Volume
1
fYear
1995
fDate
13-16 Aug 1995
Firstpage
190
Abstract
The design of low-noise amplifiers based on HEMT´s or PHEMT´s requires a knowledge of the trade-off performance. In this work, the optimum trade-off performance of an LNA for VSAT applications based on a commercial PHEMT series has been investigated vs. temperature, starting from a noise model fitted to the measured devices´ scattering parameters and noise figure values. This investigation has confirmed that for an LNA under changing ambient temperature, the combined Fmin-Gass, reported on the microwave low-noise device´s data sheets, no longer represents a useful design condition
Keywords
S-parameters; circuit noise; equivalent circuits; microwave amplifiers; microwave field effect transistors; satellite ground stations; PHEMT-based LNA; S-parameter measurements; SHF; VSAT applications; commercial PHEMT series; low-noise amplifier; noise figure measurements; noise figure values; optimum tradeoff performance; pseudomorphic HEMT; scattering parameters; temperature dependence; Circuit noise; Gain measurement; HEMTs; Low-noise amplifiers; Microwave devices; Noise figure; Noise measurement; PHEMTs; Scattering parameters; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-2972-4
Type
conf
DOI
10.1109/MWSCAS.1995.504410
Filename
504410
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