• DocumentCode
    1854713
  • Title

    Temperature dependence of PHEMT-based LNA´s trade-off performance from scattering parameters and noise figure measurements

  • Author

    Caddemi, A. ; Livreri, P. ; Sannino, M.

  • Author_Institution
    Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
  • Volume
    1
  • fYear
    1995
  • fDate
    13-16 Aug 1995
  • Firstpage
    190
  • Abstract
    The design of low-noise amplifiers based on HEMT´s or PHEMT´s requires a knowledge of the trade-off performance. In this work, the optimum trade-off performance of an LNA for VSAT applications based on a commercial PHEMT series has been investigated vs. temperature, starting from a noise model fitted to the measured devices´ scattering parameters and noise figure values. This investigation has confirmed that for an LNA under changing ambient temperature, the combined Fmin-Gass, reported on the microwave low-noise device´s data sheets, no longer represents a useful design condition
  • Keywords
    S-parameters; circuit noise; equivalent circuits; microwave amplifiers; microwave field effect transistors; satellite ground stations; PHEMT-based LNA; S-parameter measurements; SHF; VSAT applications; commercial PHEMT series; low-noise amplifier; noise figure measurements; noise figure values; optimum tradeoff performance; pseudomorphic HEMT; scattering parameters; temperature dependence; Circuit noise; Gain measurement; HEMTs; Low-noise amplifiers; Microwave devices; Noise figure; Noise measurement; PHEMTs; Scattering parameters; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
  • Conference_Location
    Rio de Janeiro
  • Print_ISBN
    0-7803-2972-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1995.504410
  • Filename
    504410