Title :
A 10Gbase Ethernet transceiver (LAN PHY) in a 1.8 V, 0.18 μm SOI/CMOS technology
Author :
Yoshimura, Tsutomu ; Ueda, Kimio ; Takasoh, Jun ; Wada, Yoshiki ; Oka, Toshihide ; Kondoh, Harufusa ; Chiba, Osamu ; Azekawa, Yoshihumi ; Ishiwaki, Masahiko
Author_Institution :
Syst. LSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for the 10 Gbit Ethernet applications. The 10Gbase Ethernet transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logic, is fabricated in a 0.18 μm SOI/CMOS process and dissipates about 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of an advanced CMOS process, this 10GE transceiver realizes the low power, low cost and compact solutions for the exponential need of broadband network applications.
Keywords :
CMOS digital integrated circuits; VLSI; high-speed integrated circuits; local area networks; low-power electronics; silicon-on-insulator; transceivers; 0.18 micron; 1.8 V; 10 Gbit/s; 10Gbase Ethernet transceiver; 2.9 W; SOI/CMOS technology; Si; advanced CMOS process; broadband network applications; fully integrated IEEE 802.3ae compliant logic; high-speed interface; low power implementation; monolithic approach; Broadband communication; CMOS logic circuits; CMOS process; CMOS technology; Costs; Ethernet networks; Large scale integration; Local area networks; Physical layer; Transceivers;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012840
