Fabrication and electrical transport properties of nickel monosilicide nanowires

Author

Sheu, J.-T. ; Yeh, S.P. ; Tsai, S.T. ; Lien, C.H.

Author_Institution

Inst. of Nanotechnol., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

11-15 July 2005

Firstpage

780

Abstract

Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin nickel films (∼50 nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N₂ ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

Keywords

etching; nanolithography; nanowires; nickel alloys; rapid thermal annealing; silicon alloys; (100) Si layer; 1 min; NiSi; Si; anisotropic wet etching; electrical properties; electrical transport; nickel monosilicide nanowires; rapid thermal annealing; scanning probe lithography; silicon on insulator substrate; solid-state reaction; Anisotropic magnetoresistance; Fabrication; Lithography; Nanowires; Nickel; Probes; Semiconductor films; Silicides; Silicon on insulator technology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500647

Filename

1500647