DocumentCode :
1854966
Title :
High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/AlxGa1-xAs double barriers
Author :
Tang, Shiang-Feng ; Chiang, Cheng Der ; Luo, Jiunn-Jye
Author_Institution :
Div. Mater. & Electro-Opt. Res., Chung-Shan Inst. of Sci. & Technol., Lung-Tan, Taiwan
fYear :
2005
fDate :
11-15 July 2005
Firstpage :
788
Abstract :
The quantum dot (QD) resonant tunneling diode (RTD) with AlxGa1-xAs double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers bounded by a pair of very thin Al0.3Ga0.7As barriers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor quantum dots; InAs-GaAs-AlxGa1-xAs; n-i-n resonant tunneling diode; peak-to-valley current ratio; quantum dots; resonant tunneling transport; Electrons; Gallium arsenide; Materials science and technology; Organic chemicals; Quantum dots; Resonant tunneling devices; Semiconductor diodes; Substrates; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
Type :
conf
DOI :
10.1109/NANO.2005.1500649
Filename :
1500649
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1854966
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