• DocumentCode
    1854966
  • Title

    High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/AlxGa1-xAs double barriers

  • Author

    Tang, Shiang-Feng ; Chiang, Cheng Der ; Luo, Jiunn-Jye

  • Author_Institution
    Div. Mater. & Electro-Opt. Res., Chung-Shan Inst. of Sci. & Technol., Lung-Tan, Taiwan
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    788
  • Abstract
    The quantum dot (QD) resonant tunneling diode (RTD) with AlxGa1-xAs double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers bounded by a pair of very thin Al0.3Ga0.7As barriers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor quantum dots; InAs-GaAs-AlxGa1-xAs; n-i-n resonant tunneling diode; peak-to-valley current ratio; quantum dots; resonant tunneling transport; Electrons; Gallium arsenide; Materials science and technology; Organic chemicals; Quantum dots; Resonant tunneling devices; Semiconductor diodes; Substrates; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2005. 5th IEEE Conference on
  • Print_ISBN
    0-7803-9199-3
  • Type

    conf

  • DOI
    10.1109/NANO.2005.1500649
  • Filename
    1500649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1854966