• DocumentCode
    1855151
  • Title

    A possibility of crystalline Indium-Gallium-Zinc-Oxide

  • Author

    Yamazaki, Shumpei

  • Author_Institution
    Semicond. Energy Lab. Co. Ltd., Atsugi, Japan
  • fYear
    2013
  • fDate
    26-28 Aug. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Crystalline IGZO thin films were first used in consumer products successfully by a joint development with Sharp Corporation. The crystalline IGZO thin films have a CAAC (C-axis Aligned Crystal) structure, a novel crystalline structure without clear grain boundaries. We examined the mechanism of formation of the structure on a given surface and fabricated TFTs using CAAC-IGZO. We examined their characteristics and found that the TFTs had little variation in characteristic and high reliability even with a short channel length L. Application of CAAC-IGZO to various LSIs is expected.
  • Keywords
    gallium compounds; indium compounds; semiconductor thin films; thin film transistors; zinc compounds; InGaZnO; TFT; crystalline IGZO thin films; crystalline indium-gallium-zinc-oxide; crystalline structure; reliability; short channel length; Crystals; Integrated circuit reliability; Silicon; Substrates; Thin film transistors; CAAC-IGZO; Characteristics of transistors; Crystal morphology; Off-state current; TFT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2013 5th Asia Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4799-1312-1
  • Type

    conf

  • DOI
    10.1109/ASQED.2013.6643553
  • Filename
    6643553