DocumentCode
1855151
Title
A possibility of crystalline Indium-Gallium-Zinc-Oxide
Author
Yamazaki, Shumpei
Author_Institution
Semicond. Energy Lab. Co. Ltd., Atsugi, Japan
fYear
2013
fDate
26-28 Aug. 2013
Firstpage
1
Lastpage
5
Abstract
Crystalline IGZO thin films were first used in consumer products successfully by a joint development with Sharp Corporation. The crystalline IGZO thin films have a CAAC (C-axis Aligned Crystal) structure, a novel crystalline structure without clear grain boundaries. We examined the mechanism of formation of the structure on a given surface and fabricated TFTs using CAAC-IGZO. We examined their characteristics and found that the TFTs had little variation in characteristic and high reliability even with a short channel length L. Application of CAAC-IGZO to various LSIs is expected.
Keywords
gallium compounds; indium compounds; semiconductor thin films; thin film transistors; zinc compounds; InGaZnO; TFT; crystalline IGZO thin films; crystalline indium-gallium-zinc-oxide; crystalline structure; reliability; short channel length; Crystals; Integrated circuit reliability; Silicon; Substrates; Thin film transistors; CAAC-IGZO; Characteristics of transistors; Crystal morphology; Off-state current; TFT;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ASQED), 2013 5th Asia Symposium on
Conference_Location
Penang
Print_ISBN
978-1-4799-1312-1
Type
conf
DOI
10.1109/ASQED.2013.6643553
Filename
6643553
Link To Document