Title :
A possibility of crystalline Indium-Gallium-Zinc-Oxide
Author :
Yamazaki, Shumpei
Author_Institution :
Semicond. Energy Lab. Co. Ltd., Atsugi, Japan
Abstract :
Crystalline IGZO thin films were first used in consumer products successfully by a joint development with Sharp Corporation. The crystalline IGZO thin films have a CAAC (C-axis Aligned Crystal) structure, a novel crystalline structure without clear grain boundaries. We examined the mechanism of formation of the structure on a given surface and fabricated TFTs using CAAC-IGZO. We examined their characteristics and found that the TFTs had little variation in characteristic and high reliability even with a short channel length L. Application of CAAC-IGZO to various LSIs is expected.
Keywords :
gallium compounds; indium compounds; semiconductor thin films; thin film transistors; zinc compounds; InGaZnO; TFT; crystalline IGZO thin films; crystalline indium-gallium-zinc-oxide; crystalline structure; reliability; short channel length; Crystals; Integrated circuit reliability; Silicon; Substrates; Thin film transistors; CAAC-IGZO; Characteristics of transistors; Crystal morphology; Off-state current; TFT;
Conference_Titel :
Quality Electronic Design (ASQED), 2013 5th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4799-1312-1
DOI :
10.1109/ASQED.2013.6643553