DocumentCode :
1855152
Title :
ESD protection design for RF integrated circuits: new challenges
Author :
Wang, Albert Z. ; Feng, H.G. ; Zhan, R.Y. ; Chen, G. ; Wu, Q.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear :
2002
fDate :
2002
Firstpage :
411
Lastpage :
418
Abstract :
The challenge in RF ESD protection circuit design, still a problem in definition, is to address the complex interactions between the ESD protection network and the circuit being protected in both directions. This paper discusses related key factors, e.g., switching and accidental triggering of ESD protection networks, as well as ESD-induced parasitic capacitive, resistive, noise coupling and self-generated noise effects. Evaluation techniques include S-parameter, Q-factor and overall specification examination. Low-parasitic compact structures are the solutions to RF ESD protection.
Keywords :
Q-factor; S-parameters; electrostatic discharge; integrated circuit design; integrated circuit noise; overvoltage protection; radiofrequency integrated circuits; ESD protection; Q-factor; RF integrated circuits; S-parameter; low-parasitic compact structures; noise coupling; parasitic capacitive effects; protection networks; self-generated noise effects; Application specific integrated circuits; Circuit optimization; Circuit synthesis; Electrostatic discharge; High speed integrated circuits; Integrated circuit noise; Protection; Radio frequency; Radiofrequency integrated circuits; Variable structure systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
Type :
conf
DOI :
10.1109/CICC.2002.1012860
Filename :
1012860
Link To Document :
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