• DocumentCode
    1855152
  • Title

    ESD protection design for RF integrated circuits: new challenges

  • Author

    Wang, Albert Z. ; Feng, H.G. ; Zhan, R.Y. ; Chen, G. ; Wu, Q.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    411
  • Lastpage
    418
  • Abstract
    The challenge in RF ESD protection circuit design, still a problem in definition, is to address the complex interactions between the ESD protection network and the circuit being protected in both directions. This paper discusses related key factors, e.g., switching and accidental triggering of ESD protection networks, as well as ESD-induced parasitic capacitive, resistive, noise coupling and self-generated noise effects. Evaluation techniques include S-parameter, Q-factor and overall specification examination. Low-parasitic compact structures are the solutions to RF ESD protection.
  • Keywords
    Q-factor; S-parameters; electrostatic discharge; integrated circuit design; integrated circuit noise; overvoltage protection; radiofrequency integrated circuits; ESD protection; Q-factor; RF integrated circuits; S-parameter; low-parasitic compact structures; noise coupling; parasitic capacitive effects; protection networks; self-generated noise effects; Application specific integrated circuits; Circuit optimization; Circuit synthesis; Electrostatic discharge; High speed integrated circuits; Integrated circuit noise; Protection; Radio frequency; Radiofrequency integrated circuits; Variable structure systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
  • Print_ISBN
    0-7803-7250-6
  • Type

    conf

  • DOI
    10.1109/CICC.2002.1012860
  • Filename
    1012860