Title :
A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS
Author :
Fong, Neric ; Plouchart, Jean-Olivier ; Zamdmer, Noah ; Liu, Duixian ; Wagner, Lawrence ; Plett, Calvin ; Tarr, Garry
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A low-voltage 3.0-5.6 GHz VCO was designed and fabricated in an 0.13 μm SOI CMOS process. This VCO features a single-loop horseshoe-shaped inductor and an array of band-switching accumulation MOS (AMOS) varactors. This results in good phase noise and a wide tuning range of 58.7% when tuned between 0 to 1.4 V. At a 1 V Supply (VDD) and 1 MHz offset, the phase noise is -120 dBc/Hz at 3.0 GHz, and -114.5 dBc/Hz at 5.6 GHz. The power dissipation is between 2 and 3 mW across the whole tuning range. The buffered output power is -7 dBm. When VDD is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz.
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; circuit tuning; integrated circuit design; phase noise; silicon-on-insulator; varactors; voltage-controlled oscillators; 0 to 1.4 V; 1 V; 2 to 3 mW; 3 to 5.6 GHz; SOI CMOS process; accumulation MOS varactors; band-switching varactor array; frequency tuning; horseshoe-shaped inductor; low-voltage VCO; multi-GHz VCO; phase noise; single-loop inductor; wide tuning range; 1f noise; CMOS technology; Circuit optimization; Copper; Inductors; Phase noise; Power dissipation; Radio frequency; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012862
