DocumentCode :
1855242
Title :
Ultra low-supply voltage reference generator with low sensitivity to PVT variations
Author :
Gopal, Hande Vinayak ; Gupta, Puneet ; Baghini, Maryam Shojaei
Author_Institution :
Dept. of Electr. Eng., IIT-Bombay, Mumbai, India
fYear :
2013
fDate :
26-28 Aug. 2013
Firstpage :
18
Lastpage :
21
Abstract :
Majority of trim-less PVT insensitive voltage reference generators are limited to minimum supply voltage above 0.7 V. This delimits use of energy harvesting techniques in CMOS circuits and systems. This paper proposes a low-cost CMOS voltage reference, which steps up the supply voltage by charge-pump based voltage booster. The raised voltage helps to drive a traditional parasitic BJT based bandgap voltage reference. The proposed voltage reference scheme is analyzed theoretically and compared with other methods. The circuit is designed and simulated in standard 180 nm mixed mode CMOS technology. The minimum required supply voltage is 400 mV. A worst case temperature coefficient of 4 ppm/°C is achieved over 0-100°C temperature range. The reference voltage exhibits mean value of 169.37 mV with worst case deviation of ±1.35 mV across process corners and temperature range of 0-100°C. Achieved PSRR at 100 Hz and 1 MHz is -86 dB and -30 dB, respectively.
Keywords :
CMOS integrated circuits; bipolar transistors; circuit simulation; energy harvesting; integrated circuit design; low-power electronics; mixed analogue-digital integrated circuits; reference circuits; CMOS circuits; PVT variations; bipolar junction transistor; charge-pump based voltage booster; circuit design; circuit simulation; energy harvesting techniques; low-cost CMOS voltage reference; mixed mode CMOS technology; parasitic BJT based bandgap voltage reference; process-supply voltage-temperature; size 180 nm; temperature 0 C to 100 C; temperature coefficient; trim-less PVT insensitive voltage reference generators; ultra low-supply voltage reference generator; voltage 169.37 mV; voltage 400 mV; worst case deviation; CMOS integrated circuits; CMOS technology; Charge pumps; Photonic band gap; Standards; Temperature distribution; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2013 5th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4799-1312-1
Type :
conf
DOI :
10.1109/ASQED.2013.6643557
Filename :
6643557
Link To Document :
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