Title :
Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application
Author :
Lung, S.L. ; Lin, Dennis ; Chen, S.S. ; Weng, Gary ; Liu, C.L. ; Lai, S.C. ; Tsai, C.W. ; Wu, T.B. ; Liu, Rich
Author_Institution :
Macronix Int. Co., Hsinchu, Taiwan
Abstract :
Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO3 (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600°C to 350 °C∼400°C LNO´s near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.
Keywords :
CMOS memory circuits; epitaxial growth; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit interconnections; lanthanum compounds; lead compounds; sputtered coatings; system-on-chip; 350 to 400 degC; CMOS process; Cu; LNO/PZT/LNO FeRAM structure; LaNiO3-PbZrO3TiO3-LaNiO3; LaNiO3-PZT-LaNiO3; advanced Cu/low-K SOC application; conductive perovskite LaNiO3 bottom electrode; crystallization temperature; embedded FeRAM module; epitaxial PZT growth; fatigue performance improvement; ferroelectric RAM; ferroelectric capacitor; in-situ sputter deposited PZT; low temperature capacitor-over-interconnect process; seed layer; Capacitors; Crystallization; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Lattices; Nonvolatile memory; Random access memory; Temperature;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012882
