• DocumentCode
    1855450
  • Title

    Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application

  • Author

    Lung, S.L. ; Lin, Dennis ; Chen, S.S. ; Weng, Gary ; Liu, C.L. ; Lai, S.C. ; Tsai, C.W. ; Wu, T.B. ; Liu, Rich

  • Author_Institution
    Macronix Int. Co., Hsinchu, Taiwan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    479
  • Lastpage
    482
  • Abstract
    Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO3 (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600°C to 350 °C∼400°C LNO´s near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.
  • Keywords
    CMOS memory circuits; epitaxial growth; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit interconnections; lanthanum compounds; lead compounds; sputtered coatings; system-on-chip; 350 to 400 degC; CMOS process; Cu; LNO/PZT/LNO FeRAM structure; LaNiO3-PbZrO3TiO3-LaNiO3; LaNiO3-PZT-LaNiO3; advanced Cu/low-K SOC application; conductive perovskite LaNiO3 bottom electrode; crystallization temperature; embedded FeRAM module; epitaxial PZT growth; fatigue performance improvement; ferroelectric RAM; ferroelectric capacitor; in-situ sputter deposited PZT; low temperature capacitor-over-interconnect process; seed layer; Capacitors; Crystallization; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Lattices; Nonvolatile memory; Random access memory; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
  • Print_ISBN
    0-7803-7250-6
  • Type

    conf

  • DOI
    10.1109/CICC.2002.1012882
  • Filename
    1012882