Title :
High speed, low power, optoelectronic InP-based HBT integrated circuits
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The next generation of fiber optic communication systems will require circuits operating at 50 GHz clock rates. InP-based Heterojunction Bipolar Transistors (HBTs) are ideally suited for the relatively low integration levels but high speed and low power required in optoelectronic transceivers. We review material, device and circuit issues related to InP HBT and the significant challenge that exists because communication system requirements are approaching the performance limits of high speed technologies.
Keywords :
III-V semiconductors; bipolar MMIC; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit technology; integrated optoelectronics; low-power electronics; 50 GHz; InP; InP-based HBT integrated circuits; OEIC; circuit issues; device issues; heterojunction bipolar transistors; high speed ICs; low power ICs; material issues; optoelectronic integrated circuits; Bandwidth; Clocks; Data communication; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Streaming media; Transceivers; Underwater cables; Wavelength division multiplexing;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012883
