InP nanobridges epitaxially formed between two vertical Si surfaces

Author

Yi, Sung Soo ; Girolami, G. ; Amano, Jun ; Islam, M. Saif ; Kamins, T.I. ; Sharma, S.

Author_Institution

Molecular Technol. Lab., Palo Alto, USA

fYear

2005

fDate

11-15 July 2005

Firstpage

55

Abstract

The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report the epitaxial growth on (111)-oriented Si surfaces of highly aligned, single-crystalline InP nanowires by chemical vapor deposition catalyzed by Au. We demonstrate laterally oriented InP nanowires bridging between vertical (111) Si surfaces formed by anisotropically etching a [110]-oriented Si substrate. This method of connecting nanowires offers a facile way of integrating III-V nanoelectronic and photonic devices with Si.

Keywords

III-V semiconductors; catalysts; chemical vapour deposition; epitaxial growth; etching; gold; indium compounds; integrated optics; nanoelectronics; nanotechnology; nanowires; semiconductor growth; (111)-oriented Si surfaces; Au catalyst; III-V compound semiconductors; InP; InP nanobridges; Si; Si technology; [110]-oriented Si substrate; anisotropically etching; chemical vapor deposition; epitaxial growth; heteroepitaxial growth; high-performance semiconductor integration; integrating III-V nanoelectronic devices; nanotechnology; photonic devices; semiconductor growth; single-crystalline InP nanowires; vertical Si surfaces; Anisotropic magnetoresistance; Chemical technology; Chemical vapor deposition; Epitaxial growth; Etching; Gold; III-V semiconductor materials; Indium phosphide; Nanowires; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500690

Filename

1500690