Title :
Switching between transverse electric and magnetic mode in InAs/AlGaAs/GaAs quantum dot infrared photodetector
Author :
Chen, Shen-De ; Chen, Ying-Ying ; Lee, Si-Chen
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
By introducing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse electric (TE) field dominant response in quantum dot infrared photodetector (QDIP) has been achieved. The TE enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain on the quantum dot. After rapid thermal annealing (RTA), the compressive strain changes. Therefore, the TE favorite peaks can be changed to transverse magnetic (TM) field enhanced and vice versa.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; electric field effects; excited states; gallium arsenide; indium compounds; infrared spectra; magnetic switching; photodetectors; rapid thermal annealing; semiconductor heterojunctions; semiconductor quantum dots; 2 nm; Al0.3Ga0.7As; InAs quantum dots; InAs-AlGaAs-GaAs; P-like first excited states; S-like ground state; capping layers; compressive strain changes; ground-excited state transition; magnetic mode switching; quantum dot infrared photodetector; rapid thermal annealing; semiconductor interface quantum dot; solid source molecular beam epitaxy; strain effects; transverse electric field switching; transverse magnetic field; Absorption; Gallium arsenide; Magnetic field induced strain; Magnetic switching; Molecular beam epitaxial growth; Photodetectors; Polarization; Quantum dots; Tellurium; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500691
