Title :
Silicon carbide (SiC) top-down nanowire electromechanical resonators
Author :
Feng, X.L. ; Matheny, M.H. ; Karabalin, R.B. ; Zorman, C.A. ; Mehregany, M. ; Roukes, M.L.
Author_Institution :
Kavli Nanosci. Inst., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We report experimental realization of very thin suspended SiC nanowires (NWs), with widths as small as 20 nm, via top-down lithography-nanomachining processes. This enables very high frequency (VHF) nanoscale electromechanical resonators with remarkable performance (e.g., resonance frequency f0~100 MHz, and quality factor Q>1000) at room temperature. Radio-frequency (RF) characterization of these resonators is achieved by engineering efficient magnetomotive signal transduction into a new compact apparatus, and by enhancing capacitive detection with impedance-matching circuits. Novel designs of top-down SiC NWs with multiple coupling gates lead to demonstrations of devices with versatile and advanced functions in both resonant and static operations.
Keywords :
lithography; nanowires; resonators; silicon compounds; SiC; magnetomotive signal transduction; nanowire electromechanical resonators; radio-frequency characterization; silicon carbide; top-down lithography-nanomachining process; Coupling circuits; Impedance; Magnetic circuits; Magnetic resonance; Q factor; RF signals; Radio frequency; Resonant frequency; Silicon carbide; Temperature; Nanoelectromechanical Systems (NEMS); Nanowire; Resonant Sensor; Resonator; Silicon Carbide (SiC); Switch;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285595
