DocumentCode :
1856281
Title :
Dielectric response and thermal conductivity of nanostructured microcomposites: High Density Polyethylene filled with a mixture of ZnO and HCl doped polyaniline
Author :
Vanga-Bouanga, C. ; Frechette, M.F. ; David, E.
Author_Institution :
Inst. de Rech. d´Hydro-Quebec, QC, Canada
fYear :
2015
fDate :
7-10 June 2015
Firstpage :
496
Lastpage :
500
Abstract :
In this study, polyaniline (PAni), was used to surround Zinc Oxide (ZnO) nanoparticles to be dispersed in a High Density Polyethylene (HDPE) matrix. The dielectric properties of the composite samples were characterized using dielectric spectroscopy in a wide range of frequencies (10-2 Hz - 1 MHz) at room temperature. Interesting results were found especially for the sample containing 10 wt% of ZnO/PAni. The presence of PAni in the composite systems contributes to an increase in conductivity of two orders of magnitude. An interfacial relaxation peak was observed for all composite films and was found to shift toward higher frequency when the amount of PAni surrounding the ZnO particle increased. The thermal conductivity of HDPE-ZnO/PAni-10 10 wt% was also greatly improved, i.e. by about 35% in comparison with that of the pure matrix.
Keywords :
II-VI semiconductors; conducting polymers; dielectric relaxation; dielectric thin films; filled polymers; hydrogen compounds; nanocomposites; nanoparticles; permittivity; thermal conductivity; wide band gap semiconductors; zinc compounds; HCl doped polyaniline; ZnO; composite films; dielectric properties; dielectric spectroscopy; frequency 0.01 Hz to 1 MHz; high density polyethylene; interfacial relaxation; nanostructured microcomposites; temperature 293 K to 298 K; thermal conductivity; zinc oxide nanoparticles; Dielectrics; Furnaces; Heating; II-VI semiconductor materials; Nitrogen; Polymers; Zinc oxide; conductivity; dielectric properties; high density polyethylene; polyaniline; thermal properties; zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation Conference (EIC), 2015 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4799-7352-1
Type :
conf
DOI :
10.1109/ICACACT.2014.7223613
Filename :
7223613
Link To Document :
بازگشت