Title :
Electronic structures of laterally coupled self-assembled quantum dot structures
Author :
Moon, Pilkyung ; Yoon, Euijoon ; Leburton, Jean-Pierre
Author_Institution :
Sch. of Mater. Sci & Eng., Seoul Nat. Univ., South Korea
Abstract :
We investigate spatial overlap of electron wave functions in three laterally coupled self-assembled quantum structures using valence force field method and eight-band k·p method. Strain profile, piezoelectric potential, band edge energy, electron and hole distributions and optical transition strength for interband transition are calculated. Bonding state, anti-bonding state, mixing of ground and excited states and the changes in selection rules are obtained by numerical simulation.
Keywords :
electronic structure; excited states; ground states; k.p calculations; numerical analysis; photoluminescence; piezoelectric semiconductors; quantum dots; red shift; self-assembly; wave functions; antibonding state; band edge energy; bonding state; electroluminescence; electron wave functions; electronic structures; excited states; ground states; nanotechnology; numerical simulation; optical transition strength; piezoelectric potential; self-assembled quantum dot structures; strain profile; valence force field method; Capacitive sensors; Electron optics; Materials science and technology; Nanotechnology; Numerical simulation; Optical mixing; Quantum computing; Quantum dots; US Department of Transportation; Wave functions;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500700
