DocumentCode :
1856417
Title :
Surfactant in TMAH for new shapes of silicon MEMS components; Its orientation dependent adsorption detected by infrared spectroscopy
Author :
Pal, P. ; Sato, K. ; Hida, H. ; Gosalvez, M.A. ; Kimura, Y. ; Ishibashi, K. ; Niwano, M.
Author_Institution :
Dept. of Micro/Nano Syst. Eng., Nagoya Univ., Nagoya, Japan
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
751
Lastpage :
754
Abstract :
We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier transform infrared microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.
Keywords :
Fourier transform spectroscopy; adsorption; etching; micromechanical devices; silicon; surfactants; Fourier Transform Infrared Microscopy; MEMS component; Si-JkJk; TMAH; crystallographic plane; etching process; infrared spectroscopy; multiple internal reflection geometry; orientation dependent adsorption; selective adsorption; surfactant applications; Etching; Fourier transforms; Geometry; Infrared detectors; Infrared spectra; Micromechanical devices; Microscopy; Reflection; Shape; Silicon; Anisotropic etching; FT-IR spectroscopy; Infrared; Silicon; Surfactant; TMAH;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285602
Filename :
5285602
Link To Document :
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