DocumentCode
1856575
Title
Temperature dependence of potential fluctuations in chalcopyrites
Author
Larsen, Jes K. ; Burger, Karin ; Gütay, Levent ; Siebentritt, Susanne
Author_Institution
Lab. for Photovoltaics, Univ. of Luxembourg, Belval, Luxembourg
fYear
2011
fDate
19-24 June 2011
Abstract
Several studies have shown that Cu-poor Cu(In, Ga)Se2 shows potential fluctuations at low temperatures which dramatically reduce the mobility and thus the diffusion length in solar cells. It is however often assumed that the fluctuations persist at room temperature. In order to characterize the properties of these fluctuations and their temperature dependence epitaxial CuInSe2 and CuGaSe2 absorbers are examined by temperature and intensity dependent photoluminescence. The results indicate that the potential fluctuations flatten for temperatures higher than 150 K. In slightly Cu-poor material the fluctuations totally disappear at room temperature. In samples with a larger Cu-deficiency ([Cu]/[III]<;0.95) the fluctuations remain even at room temperature, but the magnitude of the fluctuations is reduced to a few meV. Thus, potential fluctuations in Cu-poor chalcopyrite cannot be expected to reduce the efficiency of solar cells.
Keywords
copper compounds; gallium compounds; indium compounds; photoluminescence; solar absorber-convertors; solar cells; ternary semiconductors; CuInGaSe2; chalcopyrites; intensity dependent photoluminescence; potential fluctuation temperature dependence; solar cell efficiency reduction; temperature 150 K; temperature 293 K to 298 K; temperature dependent photoluminescence; Charge carriers; Copper; Fluctuations; Materials; Photonic band gap; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6185978
Filename
6185978
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