DocumentCode
1856787
Title
Magnetoelectronic properties of cobalt doped half metallic Fe3O4
Author
Tripathy, D. ; Adeyeye, A.O.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2005
fDate
11-15 July 2005
Firstpage
153
Abstract
We have investigated in a systematic way the effect of cobalt doping on the magnetoelectronic properties of half metallic Fe3O4 films fabricated on MgO (100) substrates using co-sputtering. We observed that the magnetic and transport properties of the doped films are markedly sensitive to the doping concentration of Co. For Co doping ≥33%, zero coercivity behavior was observed in the magnetization curves. Tunneling transport of electrons causes a spin-dependent magnetoresistance of -5.5% for Fe3O4 films, which reduces to -2.4% for (Fe3O4)1-x(Co)x composite films.
Keywords
cobalt; coercive force; composite materials; doping profiles; ferromagnetic materials; iron compounds; magnetic thin films; magnetic tunnelling; magnetoelectronics; magnetoresistance; semimetallic thin films; spin polarised transport; sputter deposition; Fe3O4:Co; MgO; MgO(100) substrates; cobalt doping; composite films; cosputtering; half metallic films; magnetization curves; magnetoelectronic properties; spin-dependent magnetoresistance; transport properties; tunneling transport; Cobalt; Doping; Inorganic materials; Iron; Magnetic films; Magnetic materials; Magnetic properties; Optical films; Polarization; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500716
Filename
1500716
Link To Document