• DocumentCode
    1856888
  • Title

    The progresses of MRAM as a memory to save energy consumption and its potential for further reduction

  • Author

    Yoda, H. ; Kitagawa, E. ; Shimomura, N. ; Fujita, S. ; Amano, M.

  • Author_Institution
    Center for Semicond. R&D, Toshiba Corp., Semicond. & Storage Products Co., Kawasaki, Japan
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    Critical switching current, Isw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Qw, becomes the order of 100-150fC. With the small Qw, MRAM starts to save energy consumption by 70-80% compared with a conventional memory system. Analysis of the write pulse-width dependence of Iw revealed a further potential of perpendicular MTJ to reduce Iw and Qw. STT-MRAM is thought to achieve a further reduction of energy consumption.
  • Keywords
    MRAM devices; energy consumption; magnetic tunnelling; power aware computing; STT-MRAM; critical switching current; energy consumption; perpendicular MTJ; spin transfer torque-MRAM; write charge; write pulse-width dependence; Energy consumption; Magnetic tunneling; Memory management; Nonvolatile memory; Random access memory; Switches; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223638
  • Filename
    7223638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1856888