• DocumentCode
    1856992
  • Title

    Effect of phonon interactions on limiting the f.Q product of micromechanical resonators

  • Author

    Tabrizian, R. ; Rais-Zadeh, M. ; Ayazi, F.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    2131
  • Lastpage
    2134
  • Abstract
    We discuss the contribution of phonon interactions in determining the upper limit of f.Q product in micromechanical resonators. There is a perception in the MEMS community that the maximum f.Q product of a microresonator is limited to a ldquofrequency-independent constantrdquo determined by the material properties of the resonator. In this paper, we discuss that for frequencies higher than omegatau = 1/tau, where tau is the phonon relaxation time, the f.Q product is no longer constant but a linear function of frequency. This makes it possible to reach very high Qs in GHz micromechanical resonators. Moreover, we show that lang100rang is the preferred crystalline orientation for obtaining very high Q in bulk-acoustic-mode silicon resonators above ~750 MHz, while lang100rang is the preferred direction for achieving high-Q at lower frequencies.
  • Keywords
    bulk acoustic wave devices; crystal orientation; micromechanical resonators; phonon-phonon interactions; silicon; Akheiser regime; Landau-Rumer regime; Si; bulk acoustic mode silicon resonator; crystalline orientation; f.Q product; linear function; micromechanical resonator; phonon interaction; phonon relaxation time; ultrasonic absorption; Acoustic propagation; Acoustic waves; Attenuation; Capacitive sensors; Frequency; Microcavities; Micromechanical devices; Phonons; Temperature dependence; Thermoelasticity; Akheiser regime; Landau-Rumer regime; Q; attenuation coefficient; f.Q product; phonon interaction; resonator; ultrasonic absorption;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285627
  • Filename
    5285627