Title :
Using transient response of tin oxide gas sensor for measuring hydrogen concentration
Author :
Anisimov, O.V. ; Maksimova, N.K. ; Sevastyanov, E.Y. ; Sergeychenko, N.V.
Author_Institution :
Siberian Phys. Tech. Inst., Tomsk
Abstract :
In this paper, relationship between transient response of conductivity of tin oxide gas sensor and hydrogen concentration is described. Transient response is caused with periodical temperature changes. Theoretical part is based on Langmuir theory of adsorption and barrier theory of semiconductor. The theory was experimentally proven.
Keywords :
adsorption; chemical variables measurement; gas sensors; hydrogen; semiconductor thin films; tin compounds; transient response; H; Langmuir theory of adsorption; SnO2; barrier theory of semiconductor; hydrogen concentration measurement; periodical temperature changes; semiconductor gas sensor; tin oxide gas sensor; transient response; Communication system control; Conductivity; Gas detectors; Heating; Hydrogen; Kinetic theory; Temperature sensors; Thermal sensors; Tin; Transient response; Gas sensor; adsorption; hydrogen; tin oxide;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044845
