DocumentCode
1857122
Title
S-diode with optical control
Author
Skakunov, M.S. ; Prudaev, I.A. ; Bachnaruk, A.A.
Author_Institution
RID Ltd., Tomsk
fYear
2009
fDate
27-28 March 2009
Firstpage
170
Lastpage
173
Abstract
New optoelectronic switching device was developed. Avalanche GaAs-diode and light-emitting diode are integrated in the single crystal. It is present main static characteristics of the device.
Keywords
III-V semiconductors; avalanche photodiodes; electro-optical switches; gallium arsenide; integrated optoelectronics; light emitting diodes; optical control; optical materials; GaAs; S-diode; avalanche diode; integrated crystal; light-emitting diode; optical control; optoelectronic switching device; Avalanche breakdown; Breakdown voltage; Communication system control; Current-voltage characteristics; Gallium arsenide; Optical control; P-n junctions; Photoconductivity; Thyristors; Voltage control; Semiconductor device; avalanche S-diode; avalanche breakdown; current-voltage characteristics; gallium arsenide; space-charge region;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
978-1-4244-2007-0
Type
conf
DOI
10.1109/SIBCON.2009.5044850
Filename
5044850
Link To Document