Title :
Research of the creation opportunity of matrix X-ray gallium arsenide detector
Author :
Prokopyev, D.G. ; Lelekov, M.A. ; Duchko, A.N. ; Yushenko, A.Y.
Author_Institution :
Tomsk Polytechic Univ., Tomsk
Abstract :
Preliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work.
Keywords :
X-ray detection; embedded systems; nuclear electronics; semiconductor counters; charge collection efficiency; detector channel resistance; embedded electronics; matrix X-ray gallium arsenide detector; storage capacitor; transistor closed channel resistance; Capacitors; Circuit simulation; Communication system control; Current measurement; Diodes; Electronic circuits; Gallium arsenide; Object detection; X-ray detection; X-ray detectors; FET; GaAs-detector; X-Ray detector; digital mammography;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044853
