Title :
Quantum efficiency model driven design for wide band gap gallium phosphide solar cells
Author :
Lu, Xuesong ; Diaz, Martin ; Kotulak, Nicole ; Opila, Robert L. ; Barnett, Allen
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
The wide band gap of GaP (2.26eV) makes it a very good candidate for the top junction solar cell in a multi-junction solar cell system. A wide band gap solar cell can increase the efficiency of the system by absorbing and converting the high energy photons more efficiently. Quantum efficiency (QE) is a powerful tool in analyzing the solar cell´s performance by identifying the recombination from different regions of a solar cell. In this work, a QE model has been developed in curve fitting the measured QE curve to further analyze the solar cell and improve the solar cell design. With the continuous improved designs based on the QE analysis results, the best reported efficiency of a GaP solar cell has been achieved. This solar cell has an open circuit voltage (Voc) of 1.55V, short circuit current density (Jsc) of 1.97mA/cm2, fill factor (FF) of 79.4% and efficiency of 2.42% compared to the previous best reported efficiency of 1.17%.
Keywords :
gallium compounds; short-circuit currents; solar cells; GaP; QE model; curve fitting; electron volt energy 2.26 eV; high energy photons; open circuit voltage; quantum efficiency model driven design; short circuit current density; voltage 1.55 V; wide band gap solar cells; Coatings; Curve fitting; Junctions; Photonic band gap; Photovoltaic cells; Simulation; Surface waves;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186005