DocumentCode :
1857177
Title :
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
Author :
Jolley, Greg ; Lu, Hao Feng ; Fu, Lan ; Tan, Hark Hoe ; Tatavarti, Sudersena Rao ; Jagadish, Chennupati
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2011
fDate :
19-24 June 2011
Abstract :
An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.
Keywords :
III-V semiconductors; dark conductivity; semiconductor quantum dots; solar cells; In0.5Ga0.5As-GaAs; open circuit voltage; p-l-n solar cell dark current properties; physical processes; quantum dots; reference single junction solar cells; spectral response characteristics; temperature dependent dark current; Dark current; Gallium arsenide; Junctions; Photoconductivity; Photovoltaic cells; Quantum dots; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186006
Filename :
6186006
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1857177
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