Title :
Sensitivity to NH3 of SnO2 thin films prepared by magnetron sputtering
Author :
Anisimov, O.V. ; Maksimova, N.K. ; Chernikov, E.V. ; Sevastyanov, E.Y. ; Sergeychenko, N.V.
Author_Institution :
Siberian Phys. Tech. Inst., Tomsk
Abstract :
SnO2 thin film sensor was fabricated with microelectronic technology and NH3 (ammonia) gas sensing characteristics were measured in a temperature range 200-375degC. It was observed that surface doping with platinum improves significantly the material´s sensitivity to ammonia, and the optimal operational temperature of the sensor was 325degC. The sensor showed high sensitivity to low NH3 concentration in the range 20-350 ppm with relatively fast response (10 s) and recovery times (30 s), respectively.
Keywords :
ammonia; gas sensors; platinum; semiconductor doping; semiconductor thin films; sputter deposition; thin film sensors; tin compounds; NH3 concentration; SnO2:Pt; ammonia; gas sensing characteristics; magnetron sputtering; microelectronic technology; optimal operational temperature; platinum; surface doping; temperature 200 C to 375 C; thin film sensor; Chemical sensors; Communication system control; Microelectronics; Plasma measurements; Sensor phenomena and characterization; Sputtering; Substrates; Temperature measurement; Temperature sensors; Thin film sensors; Gas sensors; sensing properties; thin films;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044854
