Possibility of nonequilibrium phase transitions in Silicon and Germanium radiation effect systems

Author

Prokopiev, E.P. ; Timoshenkov, S.P. ; Timoshenkov, A.S. ; Grigoriev, D.K. ; Timoshenkov, A.S.

Author_Institution

Moscow State Inst. of Electron. Technol., Tech. Univ., Moscow

fYear

2009

fDate

27-28 March 2009

Firstpage

205

Lastpage

210

Abstract

The article deals with the models of nonequilibrium phase transitions in the system of radiation defects of Silicon and Germanium on the basis of the developed theory of synergetic approaches to the research of open systems. These models can be used as algorithms of mathematical modeling of processes occurring in the atmosphere of Silicon and Germanium intrinsic defects.

Keywords

elemental semiconductors; gamma-ray effects; germanium; interstitials; phase transformations; silicon; vacancies (crystal); Ge; Si; algorithms; gamma-quanta radiation effects; germanium; interstitials; intrinsic defects; mathematical modeling; nonequilibrium phase transitions; radiation effect systems; silicon; vacancies; Atmospheric modeling; Communication system control; Control systems; Equations; Germanium; Mathematical model; Open systems; Radiation effects; Silicon; Temperature; Germanium; Nonequilibrium; Phase Transitions; Radiation Effect; Silicon; Systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2009. SIBCON 2009. International Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

978-1-4244-2007-0

Type

conf

DOI

10.1109/SIBCON.2009.5044857

Filename

5044857