Title :
Possibility of nonequilibrium phase transitions in Silicon and Germanium radiation effect systems
Author :
Prokopiev, E.P. ; Timoshenkov, S.P. ; Timoshenkov, A.S. ; Grigoriev, D.K. ; Timoshenkov, A.S.
Author_Institution :
Moscow State Inst. of Electron. Technol., Tech. Univ., Moscow
Abstract :
The article deals with the models of nonequilibrium phase transitions in the system of radiation defects of Silicon and Germanium on the basis of the developed theory of synergetic approaches to the research of open systems. These models can be used as algorithms of mathematical modeling of processes occurring in the atmosphere of Silicon and Germanium intrinsic defects.
Keywords :
elemental semiconductors; gamma-ray effects; germanium; interstitials; phase transformations; silicon; vacancies (crystal); Ge; Si; algorithms; gamma-quanta radiation effects; germanium; interstitials; intrinsic defects; mathematical modeling; nonequilibrium phase transitions; radiation effect systems; silicon; vacancies; Atmospheric modeling; Communication system control; Control systems; Equations; Germanium; Mathematical model; Open systems; Radiation effects; Silicon; Temperature; Germanium; Nonequilibrium; Phase Transitions; Radiation Effect; Silicon; Systems;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044857
