Title :
Analysis of high growth rate MOCVD structures by solar cell device measurements
Author :
Schmieder, Ken ; Haughn, Chelsea ; Pulwin, Ziggy ; Dyer, Devon ; Mutitu, James ; Doty, Matt ; Ebert, Chris ; Barnett, Allen
Author_Institution :
Solar Power Program, Univ. of Delaware, Newark, DE, USA
Abstract :
Metal organic chemical vapor deposition (MOCVD) tools are integral to many technologies, including the growth of high-efficiency multijunction III-V solar cells. Veeco MOCVD has recently developed new tool designs that allow increased MOCVD growth rates that could drastically increase solar cell throughput and reduce manufacturing costs. It is important, however, to understand the trade-offs between increased throughput and decreased material quality and device performance. We fabricate multijunction III-V solar cells from materials grown by both standard and fast growth rate techniques. We analyze the open circuit voltage, short circuit current, fill factor, efficiency, and ideality factor of both types of devices. Comparison of these devices reveals that the existing fast growth protocols result in solar cells with similar performance to standard growth cells. The results suggest that increased growth rates can enable higher throughput fabrication of solar cells without significant performance sacrifices.
Keywords :
III-V semiconductors; MOCVD; short-circuit currents; solar cells; device performance; fill factor; high growth rate MOCVD structures; ideality factor; manufacturing costs; material quality; metalorganic chemical vapor deposition; multijunction III-V solar cells; open circuit voltage; short circuit current; solar cell device measurements; solar cell throughput; Current measurement; MOCVD; Materials; Performance evaluation; Photovoltaic cells; Photovoltaic systems;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186013