Title :
Increase sensitivity of the sensor based on bipolar magnetotransistor by minimization initial output offset
Author :
Tikhonov, R.D. ; Kozlov, A.V. ; Chernova, Yu.A. ; Polomoshnov, S.A.
Author_Institution :
SMC Technol. Centre MIET, Zelenograd
Abstract :
In this article represent the experimental investigation of initial offset voltage between collectors in the integrated circuit including dual-collector lateral npn-type bipolar magnetotransistor in a p-well with polysilicon resistors. Choice of magnetotransistor circuit defines an operating mode and its influence on the offset. Initial offset between collectors voltage is reduced to value less than 1 mV that allows to increase relative useful output signal for a weak magnetic field.
Keywords :
bipolar transistors; integrated circuits; magnetic sensors; magnetoresistive devices; resistors; dual-collector lateral npn-type bipolar magnetotransistor; integrated circuit; magnetotransistor circuit; minimization initial output offset; polysilicon resistors; sensor; Communication system control; Current supplies; Impurities; Magnetic circuits; Magnetic sensors; Minimization; Resistors; Silicon; Sliding mode control; Voltage control; Bipolar magnetotransistor; initial offset voltage; the integrated sensor;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044859
