DocumentCode
1857395
Title
Current and capacitance modeling of short-channel DG MOSFETs
Author
Børli, H. ; Kolberg, S. ; Fjeldly, T.A. ; Iñiguez, B.
Author_Institution
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Kjeller
fYear
2008
fDate
28-30 April 2008
Firstpage
1
Lastpage
5
Abstract
We present a precise two-dimensional current and capacitance modeling for nanoscale double-gate MOSFETs covering a wide range of operating regions, geometries and material combinations. The modeling in the sub-threshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2D Poisson´s equation. The results are in excellent agreement with numerical simulations.
Keywords
MOSFET; Poisson equation; conformal mapping; nanoelectronics; semiconductor device models; 2D Poisson´s equation; conformal mapping techniques; nanoscale short-channel double-gate MOSFET; self-consistent results; sub-threshold regime; two-dimensional capacitance modeling; two-dimensional current modeling; Capacitance; Conformal mapping; Electrostatics; Insulation; Laplace equations; MOSFETs; Numerical simulation; Poisson equations; Silicon; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on
Conference_Location
Cancun
Print_ISBN
978-1-4244-1956-2
Electronic_ISBN
978-1-4244-1957-9
Type
conf
DOI
10.1109/ICCDCS.2008.4542613
Filename
4542613
Link To Document