DocumentCode
1857397
Title
Influence of the annealing on the parameters of Shottky barriers to sulfur treated n-GaAs
Author
Erofeev, E.V. ; Kagadei, V.A. ; Zaretzkaya, T.V.
Author_Institution
Sci. Res. Inst. of Electr. Commun. Syst., Tomsk
fYear
2009
fDate
27-28 March 2009
Firstpage
227
Lastpage
232
Abstract
Effect of the thermal annealing (300-380degC, 5 min) of Ti/Au barriers to sulfur treated n-GaAs (100) on its parameters was studied. It was shown that the annealing temperature influences the height of barrier, the current-voltage ideality factor and the reverse voltage at 100 muA. The optimal annealing temperature was defined.
Keywords
III-V semiconductors; Schottky barriers; annealing; gallium arsenide; gold; semiconductor-metal boundaries; titanium; GaAs; Shottky barriers; Ti-Au-GaAs; annealing temperature; current 100 muA; current-voltage ideality factor; metal-semiconductor interface; sulfur treatment; temperature 300 C to 380 C; thermal annealing; time 5 min; Annealing; Communication system control; Current-voltage characteristics; Gallium arsenide; Gold; Nitrogen; Schottky barriers; Surface treatment; Temperature measurement; Voltage; GaAs; Shottky barrier; annealing; sulfur treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
978-1-4244-2007-0
Type
conf
DOI
10.1109/SIBCON.2009.5044861
Filename
5044861
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