Title :
Novel single p+poly-Si/Hf/SiON gate stack technology on silicon-on-thin-buried-oxide (SOTB) for ultra-low leakage applications
Author :
Yamamoto, Y. ; Makiyama, H. ; Yamashita, T. ; Oda, H. ; Kamohara, S. ; Sugii, N. ; Yamaguchi, Y. ; Mizutani, T. ; Kobayashi, M. ; Hiramoto, T.
Abstract :
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf/SiON gate stack of mid-gap work function and precise GIDL control achieved ultra-low leakage of 0.2 pA/μm, which corresponds to approx. 100nA/chip (100k gate logic). Now the SOTB technology can provide three options from ultra-low voltage to ultra-low leakage that covers a wide variety of applications in the Internet of Things (IoT) era.
Keywords :
CMOS logic circuits; Internet of Things; hafnium; nanotechnology; silicon compounds; Internet of Things; IoT; SOTB CMOS technology; Si-Hf-SiON; gate stack technology; silicon-on-thin-buried-oxide; size 65 nm; ultra-low leakage; ultra-low voltage; CMOS integrated circuits; Hafnium; High K dielectric materials; Logic gates; MOS devices; Random access memory; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223665
