63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone system

Author

Iwai, T. ; Ohara, S. ; Miyashita, T. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

435

Abstract

This paper reports on a high efficiency and high linearity two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier for the Japanese personal digital cellular phone system (PDC). Our power-stage HBT amplifier exhibited a high power added efficiency (PAE) of 68.8% and an adjacent channel leakage power (ACP) of -48 dBc. The ACP of the two-stage amplifier was improved enough for PDC with keeping a high PAE by combining of a driver-stage and this power-stage amplifiers. Our two-stage HBT power amplifier exhibited the highest PAE of 63.2% ever reported and an ACP at a 50-kHz offset frequency of -52 dBc in 1.5 GHz PDC standard at a Pout of 31 dBm under a supply voltage of 3.5 V.

Keywords

III-V semiconductors; UHF power amplifiers; bipolar transistor circuits; cellular radio; digital radio; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; telephone sets; 1.5 GHz; 3.5 V; 63.2 percent; InGaP-GaAs; Japanese PDC; adjacent channel leakage power; linearity; personal digital cellular phone system; power added efficiency; two-stage InGaP/GaAs HBT power amplifier; Circuit simulation; Degradation; Digital modulation; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; Phase distortion; Power amplifiers; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705026

Filename

705026