DocumentCode :
1857444
Title :
High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
Author :
Nishi, K. ; Yokoyama, M. ; Yokoyama, H. ; Hoshi, T. ; Sugiyama, H. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2015
fDate :
16-18 June 2015
Abstract :
We have demonstrated the front-gate (FG) III-V single structure CMOS using ultra-thin body (UTB) InAs/InGaSb on insulator (-OI) on Si substrates with high hole mobility (μeff) of 240 cm2V-1s-1. We have found that the μeff is enhanced by the buffered-HF (BHF)-cleaned InAs MOS interfaces, Ni alloy S/D, and the InAs/strained InGaSb-OI hetero-interface channel. The CMOS operation using FG InAs/InGaSb-OI n/p-MOSFETs has been realized.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; antimony alloys; arsenic alloys; gallium alloys; hole mobility; indium alloys; nickel alloys; semiconductor-insulator boundaries; silicon; CMOS; InAs-InGaSb; MOSFET; Si; UTB; buffered-HF-cleaning; complementary metal oxide semiconductor; heterointerface channel; high hole mobility front-gate; metal oxide semiconductor field effect transistor; nickel alloy; semiconductor-on-insulator; ultrathin body; Aluminum oxide; CMOS integrated circuits; Cleaning; Logic gates; MOSFET circuits; Nickel; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2015.7223667
Filename :
7223667
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1857444
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