64% efficiency enhancement-mode power heterojunction FET for 3.5 V Li-ion battery operated personal digital cellular phones

Author

Bito, Y. ; Iwata, N. ; Tomita, M.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

439

Abstract

This paper describes 950 MHz power performance of an enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET operated at 3.5 V for personal digital cellular phones. The developed 0.5 /spl mu/m gate length FET exhibited an on-resistance of 1.5 /spl Omega/.mm and a threshold voltage of +0.09 V. Under single 3.5 V operation, a 19.2 mm gate width FET exhibited an output power of 1.03 W (30.1 dBm) and a power-added efficiency of 64.0% with an adjacent channel leakage power of -48.7 dBc at 50 kHz off-center frequency.

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; cellular radio; digital radio; gallium arsenide; indium compounds; junction gate field effect transistors; power field effect transistors; telephone sets; 1.03 W; 3.5 V; 64 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; Li; Li-ion battery; adjacent channel leakage power; enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs power heterojunction FET; on-resistance; personal digital cellular phone; power-added efficiency; threshold voltage; Batteries; Cellular phones; FETs; Gallium arsenide; Heterojunctions; Laboratories; National electric code; Nonhomogeneous media; Switches; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705027

Filename

705027