DocumentCode
1857686
Title
Power MOSFETs reverse conduction revisited
Author
Ferreira, A. ; Simas, M. I Castro
Author_Institution
Centro de Electron. Aplicada, Univ. Tecnica de Lisboa, Portugal
fYear
1991
fDate
24-27 Jun 1991
Firstpage
416
Lastpage
422
Abstract
A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter
Keywords
insulated gate field effect transistors; power transistors; channel resistance; control circuit design; optimized switching behavior; power MOSFET; reverse conduction; series resonant converter; Bridge circuits; Circuit topology; Diodes; Frequency; Immune system; Leg; MOSFETs; Resonance; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-0090-4
Type
conf
DOI
10.1109/PESC.1991.162709
Filename
162709
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