Title :
Power MOSFETs reverse conduction revisited
Author :
Ferreira, A. ; Simas, M. I Castro
Author_Institution :
Centro de Electron. Aplicada, Univ. Tecnica de Lisboa, Portugal
Abstract :
A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed. Performance and drawbacks are defined and tested in a series resonant converter
Keywords :
insulated gate field effect transistors; power transistors; channel resistance; control circuit design; optimized switching behavior; power MOSFET; reverse conduction; series resonant converter; Bridge circuits; Circuit topology; Diodes; Frequency; Immune system; Leg; MOSFETs; Resonance; Stress; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0090-4
DOI :
10.1109/PESC.1991.162709
