DocumentCode :
1857801
Title :
Nonuniform carrier trapping among quantum dots
Author :
Su, Yi-Shin ; Chang, Wei-Che ; Lin, Ching-Fuh
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2005
fDate :
11-15 July 2005
Firstpage :
328
Abstract :
In quantum-dot (QD) structures, carriers do not distribute uniformly among QDs. Carriers tend to distribute at larger QDs. Combined with state filling effect, carrier will populate larger QDs first. Then, carrier will populate smaller QDs at higher injection density. The nonuniform carrier distribution also leads to the separation of two emission peaks with increasing current. On the fabricated devices, the photon energy difference between the two peaks increased from 70.8 meV at 60 mA to 78 meV at 160 mA. By observing the peak separation, the tendency of carrier distribution can be identified.
Keywords :
charge injection; electron traps; hole traps; semiconductor quantum dots; 160 mA; 60 mA; carrier distribution; carrier injection density; emission peaks; nonuniform carrier trapping; photon energy; quantum dot structure; state filling effect; Doping; Etching; Fluctuations; Gallium arsenide; Laser tuning; Optical devices; Optical waveguides; Quantum dots; Quantum well devices; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
Type :
conf
DOI :
10.1109/NANO.2005.1500762
Filename :
1500762
Link To Document :
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