Detectability of the Two-Dimensional Detector for Time Resolved Emission Measurement

Author

Hirai, Nobuyuki

Author_Institution

Syst. Div., Hamamatsu Photonics K.K., Tsukuba

fYear

2008

fDate

24-27 Nov. 2008

Firstpage

272

Lastpage

272

Abstract

Time resolved emission measurement is a powerful tool to analyze the internal operating timing of LSI with picosecond resolution. In addition, TRE measurement can be used as a means to evaluate parametric fluctuations of transistors influenced by manufacturing process fluctuations. The newly developed two-dimensional NIR photocathode detector, also, has the high detectability towards quiescent state photoemission of transistors that are operating under 1.0V.

Keywords

field effect transistor circuits; integrated circuit manufacture; integrated circuit measurement; large scale integration; photocathodes; photodetectors; photoemission; FET; LSI; manufacturing process fluctuations; parametric fluctuations; picosecond resolution; quiescent state photoemission; time resolved emission measurement; transistors; two-dimensional NIR photocathode detector; two-dimensional detector; voltage 1.0 V; Cathodes; Detectors; Fluctuations; Integrated circuit measurements; Large scale integration; Leakage current; Manufacturing processes; Photoelectricity; Time measurement; Voltage; Time Resolved Emission. two-dimensional detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Asian Test Symposium, 2008. ATS '08. 17th

Conference_Location

Sapporo

ISSN

1081-7735

Print_ISBN

978-0-7695-3396-4

Type

conf

DOI

10.1109/ATS.2008.30

Filename

4711603