Wafer-level quartz dry etching technology

Author

Kamijo, Atsushi ; Monoe, Shigeharu ; Murayama, N. ; Saito, Takashi ; Kimura, N.

Author_Institution

Mater. & Devices Res. Center, Nihon Dempa Kogyo Co. Ltd., Saitama, Japan

fYear

2014

fDate

19-22 May 2014

Firstpage

1

Lastpage

4

Abstract

Wafer-level quartz dry etching technology has been developed, which enables deep reactive ion etching (DRIE) for through-etch of ≥120-μm-thick crystal quartz wafers and an X-cut quartz DRIE. Our DRIE process employs direct wafer bonding of crystal quartz and silicon wafer by means of surface active bonding at room temperature and epoxy-based negative tone, i-line photoresist for the mask of the dry etching. Etching gases and DRIE parameters are optimized from the points of etching rate, mask selectivity, the angle of the sidewall and micro-loading effect. X-cut tuning fork resonator having folded arms has been fabricated by the wafer-level quartz dry etching technology.

Keywords

X-ray masks; crystal resonators; elemental semiconductors; photoresists; quartz; silicon; sputter etching; vibrations; wafer bonding; DRIE parameter optimization; SiO₂-Si; X-cut quartz DRIE process; X-cut tuning fork resonator; crystal quartz wafer; deep reactive ion etching; direct wafer bonding; epoxy-based negative tone; etching gas; etching rate; i-line photoresist; mask selectivity; microloading effect; sidewall angle; surface active bonding; wafer level quartz dry etching technology; Bonding; Crystals; Dry etching; Resists; Silicon; Vibrations; DRIE; X-cut quartz; crystal quartz; tuning fork; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2014 IEEE International

Conference_Location

Taipei

Type

conf

DOI

10.1109/FCS.2014.6859862

Filename

6859862