Title :
Improved breakdown voltage and hot-electron reliability PHEMT for high efficiency power amplifiers
Author :
Tkachenko, Y. ; Zhao, Yiwen ; Klimashov, A. ; Wei, C.J. ; Bartle, D.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
By increasing the first recess width on the drain side of the gate, PHEMT breakdown was increased by as much as 5 V and hot electron RF stress was reduced by a factor of 2.5 to 3.5 with minor change in saturated power and power-added efficiency. Pulsed IV, loadpull and reliability measurement results are presented for PHEMT devices with various recess structures. The wide recess PHEMT provides necessary reliability margin for high efficiency and high mismatch operation of power amplifiers
Keywords :
hot carriers; power HEMT; power amplifiers; semiconductor device breakdown; semiconductor device reliability; PHEMT; RF stress; breakdown voltage; hot electron reliability; loadpull; power added efficiency; power amplifier; pulsed I-V characteristics; recess structure; saturated output power; Degradation; High power amplifiers; MESFETs; PHEMTs; Power amplifiers; Power generation; Radio frequency; Space vector pulse width modulation; Stress; Voltage;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.833667
