DocumentCode :
1858015
Title :
New high optical band gap window p layer contact development
Author :
Wang, Dapeng ; Chen, Hui ; Phatak, Anup ; Zhao, Lai ; Frei, Michel ; Chae, Yong Kee ; Yuan, Zheng ; Bezryadina, Anna ; Alers, Glenn
Author_Institution :
Appl. Mater., Santa Clara, CA, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
We developed new hydrogenated boron doped amorphous silicon oxide window p layer for thin film solar device on the commercial SnO2:F TCO. With improved optical band gap (OBG), low refraction index and low defect density, the tandem junction top cell blue response is improved as well as the overall current. Devices with the optimized film have shown higher efficiency comparing with the baseline process.
Keywords :
energy gap; solar cells; thin films; OBG; SiO:B; SnO2:F; high optical band gap window p layer contact development; hydrogenated boron doped amorphous silicon oxide window p layer; low defect density; low refraction index; optical band gap; tandem junction top cell blue response; thin film solar device; Absorption; Boron; Junctions; Optical films; Photonic band gap; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186047
Filename :
6186047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1858015
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