Title :
Design compromise between the efficiency and spectral re-growth of power amplifiers using second harmonic source/load impedance
Author :
Yang, Chi Chug ; Yu, Chi Sun ; Wing Shing Chan ; Le Chan, Wing
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
Abstract :
This paper investigates the effect of second harmonic impedance on power added efficiency (PAE) and spectral re-growth for use in GaAs MESFET class A power amplifier at 1.9 GHz. By choosing the proper source and load second harmonic impedance, a compromise between high efficiency and low spectral re-growth can be obtained
Keywords :
III-V semiconductors; MESFET circuits; UHF power amplifiers; gallium arsenide; 1.9 GHz; GaAs; GaAs MESFET class A power amplifier; design; power added efficiency; second harmonic impedance; spectral regrowth; Fasteners; Harmonic distortion; Impedance; Linearity; Power amplifiers; Power generation; Power system harmonics; Sun; Tuners; Voltage;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.833670
