• DocumentCode
    1858047
  • Title

    Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface

  • Author

    Xiao, Haibo ; Zeng, Xiangbo ; Xie, Xiaobing ; Yang, Ping ; Peng, Wenbo ; Liu, Shiyong ; Yao, Wenjie ; Liao, Xianbo ; Zuo, Yuhua ; Wang, Qiming

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by “alternately deposition and hydrogen plasma treatment method (ADHT)” at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×1016 cm-3 to 1.25 ×1016 cm-3. The short-circuit current Jsc was improved from 14.5 mA/cm2 to 17.2 mA/cm2 on bared stainless steel substrate and Obtained 24.7 mA/cm2 on a.BR substrates.
  • Keywords
    elemental semiconductors; plasma materials processing; silicon; solar cells; Si; bared stainless steel substrate; defect densities; hydrogen plasma treatment method; microcrystalline silicon N-I-P solar cell; short-circuit current; static capacitance-voltage; Amorphous silicon; Films; Photovoltaic cells; Plasmas; Solids; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186048
  • Filename
    6186048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858047