DocumentCode :
1858047
Title :
Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface
Author :
Xiao, Haibo ; Zeng, Xiangbo ; Xie, Xiaobing ; Yang, Ping ; Peng, Wenbo ; Liu, Shiyong ; Yao, Wenjie ; Liao, Xianbo ; Zuo, Yuhua ; Wang, Qiming
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear :
2011
fDate :
19-24 June 2011
Abstract :
The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by “alternately deposition and hydrogen plasma treatment method (ADHT)” at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×1016 cm-3 to 1.25 ×1016 cm-3. The short-circuit current Jsc was improved from 14.5 mA/cm2 to 17.2 mA/cm2 on bared stainless steel substrate and Obtained 24.7 mA/cm2 on a.BR substrates.
Keywords :
elemental semiconductors; plasma materials processing; silicon; solar cells; Si; bared stainless steel substrate; defect densities; hydrogen plasma treatment method; microcrystalline silicon N-I-P solar cell; short-circuit current; static capacitance-voltage; Amorphous silicon; Films; Photovoltaic cells; Plasmas; Solids; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186048
Filename :
6186048
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1858047
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