DocumentCode
1858153
Title
Ultra fine-pitch TSV technology for ultra-dense high-Q RF inductors
Author
Vitale, Wolfgang A. ; Fernandez-Bolanos, Montserrat ; Klumpp, Armin ; Weber, Josef ; Ramm, Peter ; Ionescu, Adrian M.
Author_Institution
NanoLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2015
fDate
16-18 June 2015
Abstract
We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study on the effects of dimensional scaling and passive device density on RF performance of out-of-plane inductors exploiting W-based TSVs, with pitches down to 10 μm. We show wideband RF inductors with an unprecedented combination of a quality factor peak of 7.8 at 13 GHz, self-resonance frequency of 29.2 GHz, and inductance density of 124.4 nH/mm2. The reported technology also includes low loss interconnects, fixed capacitors and LC tanks, design to serving high performance 3D-integrated RF functionalities.
Keywords
fine-pitch technology; inductors; three-dimensional integrated circuits; dimensional scaling; frequency 13 GHz; frequency 29.2 GHz; high resistivity substrate; inductance density; micro-inductors; passive device density; self-resonance frequency; ultra fine-pitch TSV technology; ultra-dense high-Q RF inductors; wideband RF inductors; Capacitors; Inductance; Inductors; Radio frequency; Substrates; Three-dimensional displays; Through-silicon vias; 3D integration; RFIC; TSV; out-of-plane inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2015.7223700
Filename
7223700
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