• DocumentCode
    1858153
  • Title

    Ultra fine-pitch TSV technology for ultra-dense high-Q RF inductors

  • Author

    Vitale, Wolfgang A. ; Fernandez-Bolanos, Montserrat ; Klumpp, Armin ; Weber, Josef ; Ramm, Peter ; Ionescu, Adrian M.

  • Author_Institution
    NanoLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study on the effects of dimensional scaling and passive device density on RF performance of out-of-plane inductors exploiting W-based TSVs, with pitches down to 10 μm. We show wideband RF inductors with an unprecedented combination of a quality factor peak of 7.8 at 13 GHz, self-resonance frequency of 29.2 GHz, and inductance density of 124.4 nH/mm2. The reported technology also includes low loss interconnects, fixed capacitors and LC tanks, design to serving high performance 3D-integrated RF functionalities.
  • Keywords
    fine-pitch technology; inductors; three-dimensional integrated circuits; dimensional scaling; frequency 13 GHz; frequency 29.2 GHz; high resistivity substrate; inductance density; micro-inductors; passive device density; self-resonance frequency; ultra fine-pitch TSV technology; ultra-dense high-Q RF inductors; wideband RF inductors; Capacitors; Inductance; Inductors; Radio frequency; Substrates; Three-dimensional displays; Through-silicon vias; 3D integration; RFIC; TSV; out-of-plane inductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223700
  • Filename
    7223700