Title :
InGaAs quantum dot lasers by selective area MOCVD growth
Author :
Elarde, V.C. ; Cueva, G.R. ; Coleman, J.J.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
Quantum dot heterostructure lasers formed by a combination of electron beam lithography and selective area MOCVD growth are described. The quantum dot laser growth and fabrication process are presented and the observed 3-dimensional quantized spectral properties are outlined.
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum dots; InGaAs; InGaAs quantum dot lasers growth; electron beam lithography; nanotechnology; quantum dot heterostructure lasers; quantum dot laser fabrication; selective area MOCVD growth; semiconductor lasers; Electron beams; Gallium arsenide; Indium gallium arsenide; Lithography; MOCVD; Quantum dot lasers; Quantum well lasers; Threshold current; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500778
