Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers

By means of a 3D self-consistent numerical simulation we have calculated the wavefunctions and energies of the states in an asymmetric GaN quantum disc (Q-disc) system. Overall, good agreement between the modeling and experimental results were observed. Furthermore, modeling has provided an insight into the carrier dynamics of the Q-disc system. In particular, results from the modeling supports the view that the nonlinear relationship between PL intensity and excitation power was due to electron tunneling between the asymmetric GaN Q-discs.