Demonstration of a nanophotonic NOT-Gate using near-field optically coupled quantum dots

Author

Kawazoe, Tadashi ; Kobayashi, Kiyoshi ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Ohtani, Naoki ; Ohtsu, Motoichi

Author_Institution

Japan Sci. & Technol. Agency, Tokyo, Japan

fYear

2005

fDate

11-15 July 2005

Firstpage

397

Abstract

We demonstrate, for the first time, operation of a nanometric optical NOT-gate using CuCl quantum dots coupled by an optical near-field interaction. The device size was smaller than 20nm and its operation energy was much lower than that of a conventional photonic device. Toward an actual nanophotonic device, we discuss the possibility of coupled InAlAs quantum dots. Double-layer InAlAs quantum dots were prepared using MBE. On the near-field luminescence spectroscopy, a luminescence peak from a single InAlAs quantum dots was observed for the first time. We show that the sample has great potential for a nanophotonic device.

Keywords

III-V semiconductors; aluminium compounds; copper compounds; indium compounds; logic gates; molecular beam epitaxial growth; nanoelectronics; semiconductor quantum dots; CuCl; CuCl quantum dots; InAlAs; MBE; double-layer InAlAs quantum dots; nanophotonic NOT-Gate; near-field luminescence spectroscopy; near-field optically coupled quantum dots; operation energy; optical near-field interaction; photonic device; Indium compounds; Luminescence; Molecular beam epitaxial growth; Nanoscale devices; Optical coupling; Optical devices; Optical diffraction; Quantum dots; Spectroscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500780

Filename

1500780