Title :
Optical properties of self-assembled InGaAs quantum wires grown on (100) GaAs substrate
Author :
Dai, Jong-Horng ; Lin, Yi-lung ; Lee, Si-Chen ; Lin, Shih-Yen ; Chi, Jim-Yong
Author_Institution :
Graduate Inst. of Electron.Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A method is proposed to grow InGaAs quantum wires on (100) GaAs substrates by solid-source molecular beam epitaxy via Stranski-Krastanov growth mode. The shape of the nano-wire structures are measured by the atomic force microscopy (AFM). Their optical properties are studied by temperature-dependent photoluminescence (PL). The integrated PL intensity at room temperature reduced to 10% of that at 20 K. From 20 to 300 K, the PL peak energy shifts only 70 meV.
Keywords :
atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanowires; photoluminescence; self-assembly; semiconductor quantum wires; 20 to 300 K; 293 to 298 K; GaAs; GaAs substrate; InGaAs; Stranski-Krastanov growth mode; atomic force microscopy; nanowire structures; optical properties; photoluminescence intensity; room temperature; self-assembled InGaAs quantum wires growth; solid-source molecular beam epitaxy; Atom optics; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium gallium arsenide; Self-assembly; Shape measurement; Substrates; Wires;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500783
