Optical properties of self-assembled InGaAs quantum wires grown on (100) GaAs substrate

Author

Dai, Jong-Horng ; Lin, Yi-lung ; Lee, Si-Chen ; Lin, Shih-Yen ; Chi, Jim-Yong

Author_Institution

Graduate Inst. of Electron.Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

11-15 July 2005

Firstpage

407

Abstract

A method is proposed to grow InGaAs quantum wires on (100) GaAs substrates by solid-source molecular beam epitaxy via Stranski-Krastanov growth mode. The shape of the nano-wire structures are measured by the atomic force microscopy (AFM). Their optical properties are studied by temperature-dependent photoluminescence (PL). The integrated PL intensity at room temperature reduced to 10% of that at 20 K. From 20 to 300 K, the PL peak energy shifts only 70 meV.

Keywords

atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanowires; photoluminescence; self-assembly; semiconductor quantum wires; 20 to 300 K; 293 to 298 K; GaAs; GaAs substrate; InGaAs; Stranski-Krastanov growth mode; atomic force microscopy; nanowire structures; optical properties; photoluminescence intensity; room temperature; self-assembled InGaAs quantum wires growth; solid-source molecular beam epitaxy; Atom optics; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium gallium arsenide; Self-assembly; Shape measurement; Substrates; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500783

Filename

1500783