Title :
Self-assembled In0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate
Author :
Hsieh, Y.C. ; Luo, G.L. ; Biswas, Dhrubes ; Chang, E.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase epitaxy (MOVPE) were investigated. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430 °C, the density of the In0.22Ga0.78As dots was estimated to be 1×1011 cm-2 and the In0.22Ga0.78As QDs thickness was 5 monolayer thick.
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; self-assembly; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; 430 C; AFM; GaAs-Ge-SixGe1-x-Si; Ge buffer; In0.22Ga0.78As; Si substrate; TEM; atomic force microscopy; metal organic vapor phase epitaxy; self-assembled quantum dots; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Germanium silicon alloys; Quantum dots; Silicon germanium; Substrates; Transmission electron microscopy;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500785
